serial presence detect pc133 registered dimm rev. 0 may. 2000 rev. 0 pc133 registered sdram dimm(168pin) type spd specification may. 2000
serial presence detect pc133 registered dimm rev. 0 may. 2000 byte # function described function supported hex value note -75 -75 0 # of bytes written into serial memory at module manufacturer 128bytes 80h 1 total # of bytes of spd memory device 256bytes (2k-bit) 08h 2 fundamental memory type sdram 04h 3 # of row address on this assembly 13 0dh 1 4 # of column address on this assembly 10 0ah 1 5 # of module rows on this assembly 1 row 01h 6 data width of this assembly 72 bits 48h 7 ...... data width of this assembly - 00h 8 voltage interface standard of this assembly lvttl 01h 9 sdram cycle time from clock @cas latency of 3 7.5ns 75h 2 10 sdram access time from clock @cas latency of 3 5.4ns 54h 2 11 dimm configuration type ecc 02h 12 refresh rate & type 7.8us, support self refresh 82h 13 primary sdram width x8 08h 14 error checking sdram width x8 08h 15 minimum clock delay for back-to-back random column address t ccd = 1clk 01h 16 sdram device attributes : burst lengths supported 1, 2, 4, 8 & full page 8fh 17 sdram device attributes : # of banks on sdram device 4 banks 04h 18 sdram device attributes : cas latency 3 04h 19 sdram device attributes : cs latency 0 clk 01h 20 sdram device attributes : write latency 0 clk 01h 21 sdram module attributes registered/buffered dqm, address & control inputs and on-card pll 1fh 22 sdram device attributes : general +/- 10% voltage tolerance, burst read single bit write precharge all, auto precharge 0eh 23 sdram cycle time @cas latency of 2 - 00h 2 24 sdram access time @cas latency of 2 - 00h 2 25 sdram cycle time @cas latency of 1 - 00h 2 26 sdram access time @cas latency of 1 - 00h 2 27 minimum row precharge time (=t rp ) 20ns 14h 28 minimum row active to row active delay (t rrd ) 15ns 0fh 29 minimum ras to cas delay (=t rcd ) 20ns 14h 30 minimum activate precharge time (=t ras ) 45ns 2dh 31 module row density 1 row of 256mb 40h 32 command and address signal input setup time 1.5ns 15h 33 command and address signal input hold time 0.8ns 08h 34 data signal input setup time 1.5ns 15h m390s3253bt1-c75 ? organization : 32mx72 ? composition : 32mx8 * 9ea ? used component part # : k4s560832b-tc75 ? # of banks in module : 1 row ? # of banks in component : 4 banks ? feature : 1,500 mil height & double sided ? refresh : 8k/64ms ? contents :
serial presence detect pc133 registered dimm rev. 0 may. 2000 serial presence detect information byte # function described function supported hex value note -75 -75 35 data signal input hold time 0.8ns 08h 36~61 superset information (maybe used in future) - 00h 62 spd data revision code jedec 2 02h 63 checksum for bytes 0 ~ 62 - f1h 64 manufacturer jedec id code samsung ceh 65~71 ...... manufacturer jedec id code samsung 00h 72 manufacturing location onyang korea 01h 73 manufacturer part # (memory module) m 4dh 74 manufacturer part # (dimm configuration) 3 33h 75 manufacturer part # (data bits) blank 20h 76 ...... manufacturer part # (data bits) 9 39h 77 ...... manufacturer part # (data bits) 0 30h 78 manufacturer part # (mode & operating voltage) s 53h 79 manufacturer part # (module depth) 3 33h 80 ...... manufacturer part # (module depth) 2 32h 81 manufacturer part # (refresh, #of banks in comp. & inter- 5 35h 82 manufacturer part # (composition component) 3 33h 83 manufacturer part # (component revision) b 42h 84 manufacturer part # (package type) t 54h 85 manufacturer part # (pcb revision & type) 1 31h 86 manufacturer part # (hyphen) " - " 2dh 87 manufacturer part # (power) c 43h 88 manufacturer part # (minimum cycle time) 7 37h 89 manufacturer part # (minimum cycle time) 5 35h 90 manufacturer part # (tbd) blank 20h 91 manufacturer revision code (for pcb) 1 31h 92 ...... manufacturer revision code (for component) b-die (3rd gen.) 42h 93 manufacturing date (week) - - 3 94 manufacturing date (year) - - 3 95~98 assembly serial # - - 4 99~125 manufacturer specific data (may be used in future) undefined - 5 126 reserved 100mhz 64h 127 reserved clk0, cl-3, conap 85h 128+ unused storage locations undefined - 5 1. the row select address is excluded in counting the total # of addresses. 2. this value is based on the component specification. 3. these bytes are programmed by code of date week & date year with bcd format. 4. these bytes are programmed by samsung s own assembly serial # system. all modules may have different unique serial #. 5. these bytes are undefined and can be used for samsung?s own purpose. note :
serial presence detect pc133 registered dimm rev. 0 may. 2000 byte # function described function supported hex value note -75 -75 0 # of bytes written into serial memory at module manufacturer 128bytes 80h 1 total # of bytes of spd memory device 256bytes (2k-bit) 08h 2 fundamental memory type sdram 04h 3 # of row address on this assembly 13 0dh 1 4 # of column address on this assembly 11 0bh 1 5 # of module rows on this assembly 1 row 01h 6 data width of this assembly 72 bits 48h 7 ...... data width of this assembly - 00h 8 voltage interface standard of this assembly lvttl 01h 9 sdram cycle time from clock @cas latency of 3 7.5ns 75h 2 10 sdram access time from clock @cas latency of 3 5.4ns 54h 2 11 dimm configuration type ecc 02h 12 refresh rate & type 7.8us, support self refresh 82h 13 primary sdram width x4 04h 14 error checking sdram width x4 04h 15 minimum clock delay for back-to-back random column address t ccd = 1clk 01h 16 sdram device attributes : burst lengths supported 1, 2, 4, 8 & full page 8fh 17 sdram device attributes : # of banks on sdram device 4 banks 04h 18 sdram device attributes : cas latency 3 04h 19 sdram device attributes : cs latency 0 clk 01h 20 sdram device attributes : write latency 0 clk 01h 21 sdram module attributes registered/buffered dqm, address & control inputs and on-card pll 1fh 22 sdram device attributes : general +/- 10% voltage tolerance, burst read single bit write precharge all, auto precharge 0eh 23 sdram cycle time @cas latency of 2 - 00h 2 24 sdram access time @cas latency of 2 - 00h 2 25 sdram cycle time @cas latency of 1 - 00h 2 26 sdram access time @cas latency of 1 - 00h 2 27 minimum row precharge time (=t rp ) 20ns 14h 28 minimum row active to row active delay (t rrd ) 15ns 0fh 29 minimum ras to cas delay (=t rcd ) 20ns 14h 30 minimum activate precharge time (=t ras ) 45ns 2dh 31 module row density 1 row of 512mb 80h 32 command and address signal input setup time 1.5ns 15h 33 command and address signal input hold time 0.8ns 08h 34 data signal input setup time 1.5ns 15h M390S6450BT1-c75 ? organization : 64mx72 ? composition : 64mx4 * 18ea ? used component part # : k4s560432b-tc75 ? # of banks in module : 1 row ? # of banks in component : 4 banks ? feature : 1,700 mil height & double sided ? refresh : 8k/64ms ? contents :
serial presence detect pc133 registered dimm rev. 0 may. 2000 serial presence detect information byte # function described function supported hex value note -75 -75 35 data signal input hold time 0.8ns 08h 36~61 superset information (maybe used in future) - 00h 62 spd data revision code jedec 2 02h 63 checksum for bytes 0 ~ 62 - 2ah 64 manufacturer jedec id code samsung ceh 65~71 ...... manufacturer jedec id code samsung 00h 72 manufacturing location onyang korea 01h 73 manufacturer part # (memory module) m 4dh 74 manufacturer part # (dimm configuration) 3 33h 75 manufacturer part # (data bits) blank 20h 76 ...... manufacturer part # (data bits) 9 39h 77 ...... manufacturer part # (data bits) 0 30h 78 manufacturer part # (mode & operating voltage) s 53h 79 manufacturer part # (module depth) 6 36h 80 ...... manufacturer part # (module depth) 4 34h 81 manufacturer part # (refresh, #of banks in comp. & inter- 5 35h 82 manufacturer part # (composition component) 0 30h 83 manufacturer part # (component revision) b 42h 84 manufacturer part # (package type) t 54h 85 manufacturer part # (pcb revision & type) 1 31h 86 manufacturer part # (hyphen) " - " 2dh 87 manufacturer part # (power) c 43h 88 manufacturer part # (minimum cycle time) 7 37h 89 manufacturer part # (minimum cycle time) 5 35h 90 manufacturer part # (tbd) blank 20h 91 manufacturer revision code (for pcb) 1 31h 92 ...... manufacturer revision code (for component) b-die (3rd gen.) 42h 93 manufacturing date (week) - - 3 94 manufacturing date (year) - - 3 95~98 assembly serial # - - 4 99~125 manufacturer specific data (may be used in future) undefined - 5 126 reserved 100mhz 64h 127 reserved clk0, cl-3, conap 85h 128+ unused storage locations undefined - 5 1. the row select address is excluded in counting the total # of addresses. 2. this value is based on the component specification. 3. these bytes are programmed by code of date week & date year with bcd format. 4. these bytes are programmed by samsung s own assembly serial # system. all modules may have different unique serial #. 5. these bytes are undefined and can be used for samsung?s own purpose. note :
serial presence detect pc133 registered dimm rev. 0 may. 2000 byte # function described function supported hex value note -75 -75 0 # of bytes written into serial memory at module manufacturer 128bytes 80h 1 total # of bytes of spd memory device 256bytes (2k-bit) 08h 2 fundamental memory type sdram 04h 3 # of row address on this assembly 13 0dh 1 4 # of column address on this assembly 10 0ah 1 5 # of module rows on this assembly 2 rows 02h 6 data width of this assembly 72 bits 48h 7 ...... data width of this assembly - 00h 8 voltage interface standard of this assembly lvttl 01h 9 sdram cycle time from clock @cas latency of 3 7.5ns 75h 2 10 sdram access time from clock @cas latency of 3 5.4ns 54h 2 11 dimm configuration type ecc 02h 12 refresh rate & type 7.8us, support self refresh 82h 13 primary sdram width x8 08h 14 error checking sdram width x8 08h 15 minimum clock delay for back-to-back random column address t ccd = 1clk 01h 16 sdram device attributes : burst lengths supported 1, 2, 4, 8 & full page 8fh 17 sdram device attributes : # of banks on sdram device 4 banks 04h 18 sdram device attributes : cas latency 3 04h 19 sdram device attributes : cs latency 0 clk 01h 20 sdram device attributes : write latency 0 clk 01h 21 sdram module attributes registered/buffered dqm, address & control inputs and on-card pll 1fh 22 sdram device attributes : general +/- 10% voltage tolerance, burst read single bit write precharge all, auto precharge 0eh 23 sdram cycle time @cas latency of 2 - 00h 2 24 sdram access time @cas latency of 2 - 00h 2 25 sdram cycle time @cas latency of 1 - 00h 2 26 sdram access time @cas latency of 1 - 00h 2 27 minimum row precharge time (=t rp ) 20ns 14h 28 minimum row active to row active delay (t rrd ) 15ns 0fh 29 minimum ras to cas delay (=t rcd ) 20ns 14h 30 minimum activate precharge time (=t ras ) 45ns 2dh 31 module row density 2 row of 256mb 40h 32 command and address signal input setup time 1.5ns 15h 33 command and address signal input hold time 0.8ns 08h 34 data signal input setup time 1.5ns 15h m390s6453bt1-c75 ? organization : 64mx72 ? composition : 32mx8 * 18ea ? used component part # : k4s560832b-tc75 ? # of banks in module : 2 rows ? # of banks in component : 4 banks ? feature : 1,700 mil height & double sided ? refresh : 8k/64ms ? contents :
serial presence detect pc133 registered dimm rev. 0 may. 2000 serial presence detect information byte # function described function supported hex value note -75 -75 35 data signal input hold time 0.8ns 08h 36~61 superset information (maybe used in future) - 00h 62 spd data revision code jedec 2 02h 63 checksum for bytes 0 ~ 62 - f2h 64 manufacturer jedec id code samsung ceh 65~71 ...... manufacturer jedec id code samsung 00h 72 manufacturing location onyang korea 01h 73 manufacturer part # (memory module) m 4dh 74 manufacturer part # (dimm configuration) 3 33h 75 manufacturer part # (data bits) blank 20h 76 ...... manufacturer part # (data bits) 9 39h 77 ...... manufacturer part # (data bits) 0 30h 78 manufacturer part # (mode & operating voltage) s 53h 79 manufacturer part # (module depth) 6 36h 80 ...... manufacturer part # (module depth) 4 34h 81 manufacturer part # (refresh, #of banks in comp. & inter- 5 35h 82 manufacturer part # (composition component) 3 33h 83 manufacturer part # (component revision) b 42h 84 manufacturer part # (package type) t 54h 85 manufacturer part # (pcb revision & type) 1 31h 86 manufacturer part # (hyphen) " - " 2dh 87 manufacturer part # (power) c 43h 88 manufacturer part # (minimum cycle time) 7 37h 89 manufacturer part # (minimum cycle time) 5 35h 90 manufacturer part # (tbd) blank 20h 91 manufacturer revision code (for pcb) 1 31h 92 ...... manufacturer revision code (for component) b-die (3rd gen.) 42h 93 manufacturing date (week) - - 3 94 manufacturing date (year) - - 3 95~98 assembly serial # - - 4 99~125 manufacturer specific data (may be used in future) undefined - 5 126 reserved 100mhz 64h 127 reserved clk0, cl-3, conap 85h 128+ unused storage locations undefined - 5 1. the row select address is excluded in counting the total # of addresses. 2. this value is based on the component specification. 3. these bytes are programmed by code of date week & date year with bcd format. 4. these bytes are programmed by samsungs own assembly serial # system. all modules may have different unique serial #. 5. these bytes are undefined and can be used for samsung?s own purpose. note :
serial presence detect pc133 registered dimm rev. 0 may. 2000 byte # function described function supported hex value note -75 -75 0 # of bytes written into serial memory at module manufacturer 128bytes 80h 1 total # of bytes of spd memory device 256bytes (2k-bit) 08h 2 fundamental memory type sdram 04h 3 # of row address on this assembly 13 0dh 1 4 # of column address on this assembly 11 0bh 1 5 # of module rows on this assembly 2 rows 02h 6 data width of this assembly 72 bits 48h 7 ...... data width of this assembly - 00h 8 voltage interface standard of this assembly lvttl 01h 9 sdram cycle time from clock @cas latency of 3 7.5ns 75h 2 10 sdram access time from clock @cas latency of 3 5.4ns 54h 2 11 dimm configuration type ecc 02h 12 refresh rate & type 7.8us, support self refresh 82h 13 primary sdram width x4 04h 14 error checking sdram width x4 04h 15 minimum clock delay for back-to-back random column address t ccd = 1clk 01h 16 sdram device attributes : burst lengths supported 1, 2, 4, 8 & full page 8fh 17 sdram device attributes : # of banks on sdram device 4 banks 04h 18 sdram device attributes : cas latency 3 04h 19 sdram device attributes : cs latency 0 clk 01h 20 sdram device attributes : write latency 0 clk 01h 21 sdram module attributes registered/buffered dqm, address & control inputs and on-card pll 1fh 22 sdram device attributes : general +/- 10% voltage tolerance, burst read single bit write precharge all, auto precharge 0eh 23 sdram cycle time @cas latency of 2 - 00h 2 24 sdram access time @cas latency of 2 - 00h 2 25 sdram cycle time @cas latency of 1 - 00h 2 26 sdram access time @cas latency of 1 - 00h 2 27 minimum row precharge time (=t rp ) 20ns 14h 28 minimum row active to row active delay (t rrd ) 15ns 0fh 29 minimum ras to cas delay (=t rcd ) 20ns 14h 30 minimum activate precharge time (=t ras ) 45ns 2dh 31 module row density 2 rows of 512mb 80h 32 command and address signal input setup time 1.5ns 15h 33 command and address signal input hold time 0.8ns 08h 34 data signal input setup time 1.5ns 15h m390s2858bt1-c75 ? organization : 128mx72 ? composition : 128mx4 * 18ea ? used component part # : k4s560632b-tc75 ? # of banks in module : 2 rows ? # of banks in component : 4 banks ? feature : 1,700 mil height & double sided ? refresh : 8k/64ms ? contents :
serial presence detect pc133 registered dimm rev. 0 may. 2000 serial presence detect information byte # function described function supported hex value note -75 -75 35 data signal input hold time 0.8ns 08h 36~61 superset information (maybe used in future) - 00h 62 spd data revision code jedec 2 02h 63 checksum for bytes 0 ~ 62 - 2bh 64 manufacturer jedec id code samsung ceh 65~71 ...... manufacturer jedec id code samsung 00h 72 manufacturing location onyang korea 01h 73 manufacturer part # (memory module) m 4dh 74 manufacturer part # (dimm configuration) 3 33h 75 manufacturer part # (data bits) blank 20h 76 ...... manufacturer part # (data bits) 9 39h 77 ...... manufacturer part # (data bits) 0 30h 78 manufacturer part # (mode & operating voltage) s 53h 79 manufacturer part # (module depth) 2 32h 80 ...... manufacturer part # (module depth) 8 38h 81 manufacturer part # (refresh, #of banks in comp. & inter- 5 35h 82 manufacturer part # (composition component) 8 38h 83 manufacturer part # (component revision) b 42h 84 manufacturer part # (package type) t 54h 85 manufacturer part # (pcb revision & type) 1 31h 86 manufacturer part # (hyphen) " - " 2dh 87 manufacturer part # (power) c 43h 88 manufacturer part # (minimum cycle time) 7 37h 89 manufacturer part # (minimum cycle time) 5 35h 90 manufacturer part # (tbd) blank 20h 91 manufacturer revision code (for pcb) 1 31h 92 ...... manufacturer revision code (for component) b-die (3rd gen.) 42h 93 manufacturing date (week) - - 3 94 manufacturing date (year) - - 3 95~98 assembly serial # - - 4 99~125 manufacturer specific data (may be used in future) undefined - 5 126 reserved 100mhz 64h 127 reserved clk0, cl-3, conap 85h 128+ unused storage locations undefined - 5 1. the row select address is excluded in counting the total # of addresses. 2. this value is based on the component specification. 3. these bytes are programmed by code of date week & date year with bcd format. 4. these bytes are programmed by samsung s own assembly serial # system. all modules may have different unique serial #. 5. these bytes are undefined and can be used for samsung?s own purpose. note :
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